| [1] | G. Lucovsky, M.E.Lasser and R. B.Emmons, Proc, IEEE, 1963, Vol.51,P.166. |
| [2] | S.M. Sze, Physics of Semiconductor Devices, 1969, P.653-667, John Wiley and Sons, New York. |
| [3] | D. E.Sawyer and R. H. Rediker, Proc,IRE, 1958, Vol.46, P.1122. |
| [4] | R.P.Riesz, Rev. Sci. Instr.,1962, Vol.33, P.994. |
| [5] | E.Burstein, Phys, Rev.,1954,Vol.93, P.632. |
| [6] | T.S. Moss, Proc, Phys, Soc, (London), 1954, Vol.B74, P.775. |
| [7] | J.F. Shanley and L.C. Perry, Proceedings of the IEEE International Electron Devices Meeting, Washington, D. C.1978. |
| [8] | D. L.Spears, Proceedings of the IRIS Detector Specialty Group Meeting,United States Air Force Academy, CO(1977). |
| [9] | J. F.Shanley and C, T, Flanagan, Lasers'79 Conference, Orlando, December 17-21, 1979. |
| [10] | B.J.Peyton, et al, IEEE J. Quant, Electron.,1972, Vol.QE-8. P. 2. |