[1] CHAI Y J,ZHANG H Y,ZHOU B K.Stability limit conditions of semiconductor lasers with a strongly coupled external cavity[J].Chinese Journal of Lasers,1996,23(4):303-306(in Chinese).
[2] ZHOU X H,CHEN J G,LU Y C.Studying the tuning range of external cavity semiconductor lasers by ray trace method[J].Semiconductor Optoelectronics,1996,17(2):158-161(in Chinese).
[3] PAN W,ZHANG X X,LUO B,et al.Reflectivity spectral characteristics on diode facets of external-cavity semiconductor lasers[J].Optical Technique,2001,27(4):291-293(in Chinese).
[4] CHEN J G,LI Y,LI D Y,et al.Determination of hysteresis loops for tunable external cavity semiconductor lasers[J].Laser Technology,2000,24(5):285-288(in Chinese).
[5] PAN Zh Q,YANG J Q,YE Y B,et al.Programmable wide band wavelength tuning external-cavity semiconductor laser[J].Acta Optica Sinica,1999,19(2):221-225(in Chinese).
[6] YANG L Zh,YANG H Y,WANG Y C,et al.The operating mode of semiconductor laser with external-cavity optical feed back[J].Acta Photonica Sinica,2000,29(12):1118-1120(in Chinese).
[7] ZHANG J,CHEN X Z,WANG Y Q.Analysis on continuous tuning range of tunable diode lasers[J].Acta Optica Sinica,2003,23(10):1220-1224(in Chinese).
[8] LIU Ch,GE J H,CHEN J.Investigation of loss and threshold characteristics in the laser diode with external feedback[J].Chinese Journal of Lasers,2004,31(12):1413-1416(in Chinese).
[9] JIANG P F,ZHOU Y,XIE F Z.Research on the dual-wavelength external-cavity semiconductor laser[J].Optical Technique,2007,33(2):287-291(in Chinese).