|
[1]
|
程振杰,余重秀.利用半导体光放大器(SOA)实现全光波长变换(WC)[J].激光技术,2000,24(3):158～162.
|
|
[2]
|
黄德修,刘雪峰.半导体激光器及其应用[M].北京:国防工业出版社,2001.149～153.
|
|
[3]
|
李士杰,张书练.应用激光基础[M].杭州:浙江大学出版社,1994.69～70.
|
|
[4]
|
BARNSLEY P E,ISAAC J I,ELTON D J.Ultra-low reflectivity broadb and 1.5μm GaInAsP semiconductor optical amplifiers[J].Electron Lett,1990,26(12):825～827. |
|
[5]
|
ZAH C E,CANEAU C,SHOKOOHI F K et al.1.3μm GaInAsP near-travelling-wave laser amplifiers made by combination of angled facets and antireflection coatings[J].Electron Lett,1988,24(20):1275～1276. |
|
[6]
|
CHA J,KITAMURA M,HONMOU H et al.1.5μm band traveling-wave semiconductor optical amplifiers with window facet structure[J].Electron Lett,1989,25(18):1241～1242. |
|
[7]
|
MORITO K,EKAWA M,WATANABE T et al.High-output-power polarization-insensitive semiconductor optical amplifier[J].IEEE J Lightwave Technol,2003,21(1):176～181. |
|
[8]
|
OLSSON N A.Polarization-independent configuration optical amplifier[J].Electron Lett,1988,24(17):1075～1076. |
|
[9]
|
刘雪峰,孙军强,刘德明 et al.行波半导体光放大器的偏振特性研究[J].光学学报,1995,15(10):1306～1310.
|
|
[10]
|
NEWKIRK M A,MILLER B I,KOREN U et al.1.5μm multi-quantum-well semiconductor optical amplifier with tensile and compressively strained wells for polarization independent gain[J].IEEE Photon Technol Lett,1993,5(4):406～408. |
|
[11]
|
DOUSSIER P,GARABEDIAN P,GRAVER C et al.1.55μm polarization-independent semiconductor optical amplifier with 25dB fiber to fiber gain[J].IEEE Photon Technol Lett,1994,6(2):170～172. |
|
[12]
|
CHO Y S,CHOI W Y.Analysis and optimization of polarization-insensitive semiconductor optical amplifiers with delta-strained quantum wells[J].IEEE J Q E,2001,37(4):574～579. |
|
[13]
|
MATHUR A,DAPKUS P D.1.55μm dual-polarization lasers implemented with compressive and tensile-strained quantum wells[J].IEEE Photon Technol Lett,1995,7(11):1243～1245. |
|
[14]
|
段子刚,张哲民,刘德明 et al.低偏振灵敏度半导体光放大器[J].中国激光,2000,27(3):203～205.
|
|
[15]
|
刘德明,徐文超,黄德修.低偏振相关的半导体光放大器[J].华中理工大学学报,1999,27 (10):1～3.
|
|
[16]
|
ITO T,YOSHIMOTO N,MAGARI K et al.Wide-band polarization-independent tensile-strained InGaAs MQW-SOA gate[J].IEEE Photon Technol Lett,1998,10(5):657～659. |
|
[17]
|
MAGARI K,OKAMOTO M,NOGUCHI Y.1.55μm polarization insensitive high-gain tensile-strained-barrier MQW optical amplifier[J].IEEE Photon Technol Lett,1991,3(11):998～1000. |
|
[18]
|
GODEFROY A,Le CORRE A,CLEROT F.1.55μm polarization-insensitive optical amplifier with strain-balanced superlattice active layer[J].IEEE Photon Technol Lett,1995,7(5):473～475. |
|
[19]
|
TIEMEIJER L F,THIJS P J A,Van DONGEN T et al.Polarization insensitive multiple quantum well laser amplifiers for the 1300 nm window[J].A P L,1993,62(8):826～828. |
|
[20]
|
TISHININ D,UPPAL K,KIM I et al.1.3μm polarization insensitive amplifiers with integrated-mode transformers[J].IEEE Photon Technol Lett,1997,9(10):1337～1339. |
|
[21]
|
Di CARLO A,REALE A,TOCCA L et al.Polarization-independent delta-strained semiconductor optical amplifiers:a tight-binding study[J].IEEE J Q E,1998,34(9):1730～1739. |
|
[22]
|
WARTAK M S,WEETMAN P.The effect of thickness of delta-strained layers in the design of polarization-insensitive semiconductor optical amplifiers[J].IEEE Photon Technol Lett,2004,16(4):996～998. |
|
[23]
|
SOTO H,ERASME D,GUEKOS G.Cross-polarization modulation in semiconductor optical amplifiers[J].IEEE Photon Technol Lett,1999,11(8):970～972. |
|
[24]
|
MANNING R J,ANTONOPOULOS A,ROUX L R et al.Experimental measurement of nonlinear polarization rotation in semiconductor optical amplifiers[J].Electron Lett,2001,37(4):229～231. |
|
[25]
|
SOTO H,ALVAREZ E,DIAZ C A et al.Design of an all-optical NOT XOR gate based on cross-polarization modulation in a semiconductor optical amplifier[J].Opt Commun,2004,237:121～131. |
|
[26]
|
STEPENS M F C,ASGHARI M,PENTY R V et al.Demonstration of ultrafast all-optical wavelength conversion utilizing birefringence in semiconductor optical amplifiers[J].IEEE Photon Technol Lett,1997,9(4):449～451. |
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