1.55μm单光子源用Si/SiO2-InP微柱腔的鲁棒性研究
Fabrication imperfection effect on Si/SiO2-InP micropillar cavities for 1.55μm single photon source
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摘要: 为了评估实际制备中工艺偏差对此前设计的Si/SiO2-InP微柱腔性能的影响,采用了基于有限时域差分法的模拟仿真,从工艺缺陷以及工艺误差两个角度,模拟了非理想工艺条件对Si/SiO2-InP微柱腔性能的影响。结果表明,在目前可达到的加工精度下,如椭圆因子为0.1、锥形侧壁角度为3°、尺寸误差为5%,Si/SiO2-InP微柱腔仍能保持满足应用需求的性能,证明了设计的1.55μm量子点单光子源有很高的鲁棒性。该研究为通信波段单光子源提供了切实可行的方案。Abstract: In order to the evaluate the non-ideal fabrication on the performance of our Si/SiO2-InP microcavity, a simulation based on the finite difference time domain method was used. From the perspective of process defects and process errors, the effects of non-ideal process conditions on the performance of Si/SiO2-InP micro-pillar cavities were simulated. The simulation results suggest the robustness against processing imperfection and the application feasibility of the hybrid Si/SiO2-InP micropillar cavities as 1.55μm quantum dot single photon sources to be applied in silica-fiber-based quantum information processing.
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Figure 6. a, d—the effect of fluctuations in the thickness of the DBR layer on the mode wavelength and quality factor of the microcavity b, e—the effect of the fluctuation of the diameter of the DBR layer on the mode wavelen-gth and quality factor of the microcavity c, f—the effect of fluctuations in the thickness and diameter of the DBR layer on the mode wavelength and quality factor of the microcavity
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