Crystallization of amorphous silicon based on excimer laser
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1.
Open Laboratory of Key Subject of Photo-electronics Information Material and Devices of Henan Province, School of Physics and Electronics, Henan University, Kaifeng 475004, China
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Corresponding author:
HUANG Ming-ju, hmingju@163.com
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Received Date:
2012-07-10
Accepted Date:
2012-08-14
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Abstract
In order to reduce the "S-W effect" of amorphous silicon thin film solar cells and increase its photoelectric conversion efficiency, intrinsic amorphous silicon thin films prepared by plasma enhanced chemical vapov deposition were crystallized with KrF excimer laser. The crystalline effect of the crystallized films under different laser energy density and repeated frequency was characterized with Raman spectroscopy, the morphologies of the samples before and after the crystallization was studied by means of scanning electron microscope. It is shown that the crystallization effect became better with the increase of laser energy density, maximum value of crystallization rate was 76.34% when the energy density reached 268.54mJ/cm2 and the optimum energy density range was from 204.99mJ/cm2 to 268.54mJ/cm2 in which the surface of film was crystallized well. In the range of 1Hz~10Hz, the crystallization effect got better with the increase of laser repeation frequency. Microcrystalline and polycrystal particles appeared obviously after the crystallization so that a good crystallization effect was achieved.
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