Study on Si doped with supersaturated Ti induced by continuous wave Nd:YAG laser

FAN Baodian; CHEN Rong; PANG Aisuo; CHEN Chao

doi:10.7510/jgjs.issn.1001-3806.2016.02.011

In order to prepare Si with supersaturated transition metal, a self-designed linear high power Nd:YAG continuous wave laser was used to irradiate a Si wafer sputtered a layer of Ti. Then the sample was measured by Auger electron spectroscopy and the thermal field was simulated based on the 2-D thermodynamic model. The experimental results indicate that the concentration of Ti in Si is much larger than the solid solubility of Ti in Si and the position of the maximum concentration of the Ti is below the surface of the sample. The maximum temperature is not at the top surface of the sample. Temperature distribution directly leads to the maximum temperature of Si wafer below the top surface of the sample. The simulation results are in good agreement with the experiment results. The saturated transition metal can be supersaturated by irradiating and scanning the material surface with a linear continuous wave laser.

Study on Si doped with supersaturated Ti induced by continuous wave Nd:YAG laser

Corresponding author: CHEN Chao, cchen@xmu.edu.cn

1. College of Energy, Xiamen University, Xiamen 361005, China;

2. School of Physics and Mechanical & Electrical Engineering, Xiamen University, Xiamen 361005, China

Received Date: 2015-02-04

Accepted Date: 2015-02-13

Available Online: 2016-03-25

Abstract: In order to prepare Si with supersaturated transition metal, a self-designed linear high power Nd:YAG continuous wave laser was used to irradiate a Si wafer sputtered a layer of Ti. Then the sample was measured by Auger electron spectroscopy and the thermal field was simulated based on the 2-D thermodynamic model. The experimental results indicate that the concentration of Ti in Si is much larger than the solid solubility of Ti in Si and the position of the maximum concentration of the Ti is below the surface of the sample. The maximum temperature is not at the top surface of the sample. Temperature distribution directly leads to the maximum temperature of Si wafer below the top surface of the sample. The simulation results are in good agreement with the experiment results. The saturated transition metal can be supersaturated by irradiating and scanning the material surface with a linear continuous wave laser.

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Reference (19)

[1]	LIU Y D, YAO Zh J. Progress of YAG ceramic laser[J]. Laser Technology, 2013, 27(3):326-329(in Chinese).
[2]	BRANDT M, SCOTT D A, EMMS S B. Laser cladding with a pulsed Nd:YAG laser and optical fibers[J]. Journal of Laser Applications, 1997,9(2):67-75.
[3]	VILAR R. Laser cladding[J].Journal of Laser Applications,1999,11(2):64-79.
[4]	DUAN G P, CHEN J L, ZHOU D R, et al.Crystallization of amorphous silicon based on excimer laser[J]. Laser Technology, 2013, 37(2):151-154(in Chinese).
[5]	WU D J, ZHANG T W, MA G Y, et al. Influence of welding parameters on the morphology of Fe-Ni alloy with continuous wave YAG laser[J]. Chinese Journal of Lasers, 2013,40(3):0303003(in Chinese).
[6]	CAI Zh H, TIAN H T, CHEN Ch, et al. Doping of Zn into InP induced by YAG continuous wave laser[J]. Chinese Journal of Quantum Electronics, 2002,19(5):467-470(in Chinese).
[7]	XUE Zh Q, HUANG Sh R, ZHANG B P,et al. Laser-induced Zn doping in GaN based light-emitting diode[J]. Applied Physics Letters, 2010, 96(14):141101.
[8]	CHEN Ch, PANG A S. A laser of purify method to purify the multi-crystalline:China 201110202745[P]. 2013-05-08(in Chinese).
[9]	LUQUE A, MART A. Increasing the efficiency of ideal solar cells by photon induced transitions at intermediate levels[J]. Physical Review Letters, 1997, 78(26):5014-5017.
[10]	LUQUE A, MART A, ANTOLN E, et al.Intermediate bands versus levels in non-radiativerecombination[J]. Physica, 2006, B382(1/2):320-327.
[11]	LUQUE A, MART A. Increasing the efficiency of ideal solar cells by photon induced transitionsat intermediate levels[J]. Physical Review Letters, 1997, 78(26):5014-5017.
[12]	OLEA J, TOLEDANO-LUQUE M, PASTOR D,et al. Titanium doped silicon layers with very high concentration[J].Journal of Applied Physics, 2008, 104(1):016105.
[13]	ZHOU Y R, LIU F Zh, ZHU M F, et al. Insulator-to-metal transition in heavily Ti-doped silicon thin film[J]. Applied Physics Letters,2013, 102(22):222106.
[14]	RECHT D, SMITH M J, CHARNVANICHBORIKARN S, et al. Supersaturating silicon with transition metals by ion implantationand pulsed laser melting[J]. Journal of Applied Physics, 2013,114(12):124903.
[15]	CHEN Ch, FAN B D, CAI L H. A type of crystalline Si material with aintermediate band doped by titanium doping and its preparation method:China. 201310289506[P].2013-10-02(in Chinese).
[16]	MATHIOT D, BARBIER D. Solubility enhancement of metallic impurities in silicon by rapid thermal annealing[J].Journal of Applied Physics, 1991,69(7):3878.
[17]	HOCINE S,MATHIOT D.Titanium diffusion in silicon[J].Applied Physics Letters,1988, 53(14):1269-1271.
[18]	PRAKASH C. Thermal conductivity variation of silicon with temperature[J]. Microelectronics Reliability, 1978, 18(4):333-334.
[19]	MORITA K,MIKI T.Thermodynamics of solar-grade-silicon refining[J]. Intermetallics, 2003,11(11/12):1111-1117.

Study on Si doped with supersaturated Ti induced by continuous wave Nd:YAG laser

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