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Volume 18 Issue 3
Sep.  2013
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Citation:

Rapid developing LCVD technology

  • Received Date: 1993-02-24
    Accepted Date: 1993-10-20
  • In This paper,the development process and the application of LCVD technology in growing the metal film,dielectric film and semiconductor film in during the past ten years are reviewed.With this technology,not only the conventional de-vices can get the excellent electronic features because of low growth temperature,but also the new structure materials and new devices can be manufactured for using the high accurate thickness control.The wide application prospect of LCVD technology is described here.
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    沈阳化工大学材料科学与工程学院 沈阳 110142

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Rapid developing LCVD technology

  • 1. The Department of Electronics&Engineering of Jilin University, Jilin Univ.Division of Integrated Photoelectronics Union Lab.

Abstract: In This paper,the development process and the application of LCVD technology in growing the metal film,dielectric film and semiconductor film in during the past ten years are reviewed.With this technology,not only the conventional de-vices can get the excellent electronic features because of low growth temperature,but also the new structure materials and new devices can be manufactured for using the high accurate thickness control.The wide application prospect of LCVD technology is described here.

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