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Volume 29 Issue 3
Sep.  2013
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Citation:
shu

Appealing component changes and optical properties of VO2 thin films

  • 1.

    Institute of Opto-electronics, Harbin Institute of Technology, Harbin 150001, China

  • Preperation parameters are studied to get highly pure vanadium dioxide thin films.VO2 thin films are deposited by magnetron sputtering methods.VO2 thin films prepared in different conditions are studied by means of X-ray photoelectron spectroscopy (XPS), constituents of the VO3+,VO4+ and VO5+ in the film are gotten by fitting the XPS peaks with 100% Guassian like curves.Then the thin films are annealed to increase the percentages of the VO4+, the effect of annealing is analyzed.The transmittance at 10.6 μm changed from 74% at 60℃ to 11.93% at 74℃, semiconductor-to-metal phase transition occurs.
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  • [1]

    YIN D C,XU N K,ZHANG J Y et al.Vanadium dioxide films with good electrical switching property [J].J Phys,1996,D29(4):1051～1057.
    [2] 王骐,范金荣.红外制导武器抗激光致盲技术纵横谈 [J].现代防御技术,2001,29(6):47～50.
    [3] 查子忠,王骐,李学春 et al.VO2薄膜对TEA CO2激光响应特性的实验研究 [J].光学学报,1996,16(8):1173～1176.
    [4] 刘金城,鲁建业,田雪松 et al.磁控溅射法制备二氧化钒薄膜最佳参量的研究 [J].光子学报,2003,32(1):65～67.
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    KRISHNA M G,DEBAUGE Y,BHATTACHARYA A K.X-ray photoelectron spectroscopy and spectral transmittance study of stoichiometry in sputtered vanadium oxide films [J].Thin Solid Films,1998, 312:116～122.
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    沈阳化工大学材料科学与工程学院 沈阳 110142

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Appealing component changes and optical properties of VO2 thin films

    Corresponding author: WANG Qi, qwiang@hope.hit.edu.cn
  • 1. Institute of Opto-electronics, Harbin Institute of Technology, Harbin 150001, China
  • Received Date: 2004-03-30
  • Accepted Date: 2004-06-04
  • Available Online: 2005-05-25

Abstract: Preperation parameters are studied to get highly pure vanadium dioxide thin films.VO2 thin films are deposited by magnetron sputtering methods.VO2 thin films prepared in different conditions are studied by means of X-ray photoelectron spectroscopy (XPS), constituents of the VO3+,VO4+ and VO5+ in the film are gotten by fitting the XPS peaks with 100% Guassian like curves.Then the thin films are annealed to increase the percentages of the VO4+, the effect of annealing is analyzed.The transmittance at 10.6 μm changed from 74% at 60℃ to 11.93% at 74℃, semiconductor-to-metal phase transition occurs.

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