Advanced Search

ISSN1001-3806 CN51-1125/TN Map

Volume 29 Issue 4
Sep.  2013
Article Contents
Turn off MathJax

Citation:

Yb3+/Er3+ co-doped Al2O3 optical waveguide fabricated by middle frequency sputter

  • Corresponding author: SONG Chang-lie, songcl@dlut.edu.cn
  • Received Date: 2004-04-08
    Accepted Date: 2004-06-25
  • SiO2 is formed on the monocrystalline silicon(100) substrate by means of high temperatare oxidation,then Yb and Er are embeded in highly pure aluminum,and Yb,Er-co-doped Al2O3 film is produced with middle frequeney sputter technique.The influence of target voltage and deposit rate varying with oxygen flow is discussed.The optimized oxygen flow of deposite oxide film is presented.A strong photoluminescence at 1535nm is detected at the room temperature.Optical film is carved by BCl3 ion beam under optical mask to form square optical waveguide.
  • 加载中
  • [1]

    van den HOVEN G N,KOPER R J I M,POLMAN A et al.Net optical gain at 1.53μm in Er-doped Al2O3 waveguides on silicon [J].A P L,1996,68(14):1886~1888.
    [2]

    POLMAN A.Erbium implanted thin film photonic materials [J].J A P,1997,82(1):1~37.
    [3]

    STEPIKHOVA M,PALMETSHOFER L,JANTSCH W et al.1.5μm infrared photoluminescence phenomena in Er-doped porous silicon [J].A P L,1998,74(4):537~539.
    [4]

    FONSECA L,COMPARATIVE L F,RESTO F C et al.analysis of the 1.54 μm emission of Er-doped Si/SiO2 films and the size distribution of the nanostructure [J].Materials Science and Engineering,2000,79(2/3):109~112.
    [5]

    SEMA R,DELMONTE F,MORENO E M et al.Photoluminescence performance of pulsed-laser deposited Al2O3 thin films with large erbium concentrations [J].A P L,2001,90(10):5120~5125.
    [6]

    CHRYSSOU C E,PITT C W,KENYON A J et al.Er3+-doped Al2O3 thin films by plasma-enhanced chemical vapor deposition exhibiting a 55nm optical bandwidth [J].IEEE J Q E,1998,34(2):282~284.
    [7]

    MCFARLANE R A,LUI M,YAP D et al.Rare earth doped fluoride waveguides fabricated using molecular beam epitaxy [J] IEEE J Q E selected topics,1995,1(1):82~91.
    [8]

    XIANG Q,LAM Y L,CHAN Y C et al.Optical properties of Er3+-doped SiO2-GeO2-Al2O3 planar waveguide fabricated by sol-gel processes [J].Thin Solid Films,2000,370:243~247.
    [9] 赵来,刘翔宇,许生 et al.中频双靶反应磁控溅射制备TiO2膜的一些探索 [J].真空,2003(1):17~20.

    [10] 侯亚奇,庄大明,张弓 et al.中频交流反应溅射TiO2薄膜的制备及性能研究 [J].真空科学与技术,2001(6):457~460.

    [11] 李成仁,宋昌烈,饶文雄 et al.两片掺铒玻璃样品级联荧光光谱的实验研究 [J].物理学报,2003,52(3):751~755.

    [12] 李淑凤,宋昌烈,巢明.不同波长泵浦的掺铒Al2O3薄膜光波导1.53μm 荧光特性 [J].光电子 · 激光,2001,12(1):14~18.

    [13] 李成仁,宋昌烈,李淑凤 et al.溶胶-凝胶(sol-gel)法制作掺铒Al2O3薄膜及其光致发光光谱特性测量 [J].光子学报,2003,32(12):1514~1517.

  • 加载中
通讯作者: 陈斌, bchen63@163.com
  • 1. 

    沈阳化工大学材料科学与工程学院 沈阳 110142

  1. 本站搜索
  2. 百度学术搜索
  3. 万方数据库搜索
  4. CNKI搜索

Article views(2510) PDF downloads(383) Cited by()

Proportional views

Yb3+/Er3+ co-doped Al2O3 optical waveguide fabricated by middle frequency sputter

    Corresponding author: SONG Chang-lie, songcl@dlut.edu.cn
  • 1. Department of Physics, Dalian University of Technology, Dalian 116024, China

Abstract: SiO2 is formed on the monocrystalline silicon(100) substrate by means of high temperatare oxidation,then Yb and Er are embeded in highly pure aluminum,and Yb,Er-co-doped Al2O3 film is produced with middle frequeney sputter technique.The influence of target voltage and deposit rate varying with oxygen flow is discussed.The optimized oxygen flow of deposite oxide film is presented.A strong photoluminescence at 1535nm is detected at the room temperature.Optical film is carved by BCl3 ion beam under optical mask to form square optical waveguide.

Reference (13)

Catalog

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return