Advanced Search

ISSN1001-3806 CN51-1125/TN Map

Volume 30 Issue 3
Sep.  2013
Article Contents
Turn off MathJax

Citation:

The quality study on excimer laser-induced electrochemical etching of silicon

  • Corresponding author: SHI Tie-lin, tlshi@public.wh.hb.cn
  • Received Date: 2005-05-17
    Accepted Date: 2005-06-14
  • To solve some problems of silicon etching technique,laser electrochemical etching process,which combines laser direct etching process and electrochemical etching process,is adopted to etch silicon.The characteristic of compound etching technique is investigated.The experiments of micromachining silicon by laser-induced electrochemical etching are carried out with a 248nm KrF excimer laser as light source and KOH solution as electrolyte.Based on the experimental results,basic etching silicon appearances by laser electrochemical etching are researched and the quality problems of transverse effect on etching surface and impacting effect on back surface are analyzed.The quality and verticality of cavities by the techniques are good.At the same time,the etching stop of silicon anisotropic etching in alkaline solution is raveled in the process.As a result,it possesses the ability of machining big aspect ratio microstructure.Besides,this process can transfer pattern without mask.
  • 加载中
  • [1]

    ZHANG Y Sh,DING T,REN L F.Transferring image to GaAs in excimer laser induced aqueous etching[J].Chinese Journal of Lasers,1992,19(9):663~667(in Chinese).
    [2]

    DATTA M,ROMANKIW L.Application of chemical and electrochemical micromachining in electronics industry[J].J Electrochem Soc,1989,136(6):285~292.
    [3]

    KOHL P A.Photoelectrochemical etching of semiconductors[J].IBM Journal of Research and Development,1998,42(5):629~637.
    [4]

    SONG D Y,GUO B Z,LI B T.Properties of Ar+ laser-induced wet etching into Si[J].Laser Technology,1999,23(3):190~193(in Chinese).
    [5]

    LIU H P,ZHOU Y H,XIONG L C et al.Experimental study on transverse affect zone in excimer laser direct etching[J].Laser Technology,2005,29(2):132~134(in Chinese).
    [6]

    NOWAK R,METEV S.Thermochemical laser etching of stainless steel and titanium in liquids[J].Appl Phys,1996,A63(2):133~138.
    [7]

    LIU H P,ZHOU Y H,XIONG L C et al.Experimental study on electrochemical characteristics of metal in excimer laser-enhanced processes[J].Applied Laser,2004,24(4):200~202(in Chinese).
    [8]

    SHAFEEV G A,OBRAZTSOVA E D,PIMENOV S M.Laser-assisted etching of diamonds in air and in liquid media[J].Materials Science and Engineering,1997,B46(1~3):129~132.
    [9]

    HUTTON R S,PORT S N,SCHIFFRIN D J et al.Photoelectrochemical imaging of the etching and passivation of silicon in aqueous KOH[J].Journal of Electroanalytical Chemistry,1996,418(1~2):153~158.
    [10]

    NEMIROVSKY Y,EL-BAHAR A.The non equilibrium band model of silicon in TMAH and in anisotropic electrochemical alkaline etching solutions[J].Sensors and Actuators,1999,75(3):205~214.
  • 加载中
通讯作者: 陈斌, bchen63@163.com
  • 1. 

    沈阳化工大学材料科学与工程学院 沈阳 110142

  1. 本站搜索
  2. 百度学术搜索
  3. 万方数据库搜索
  4. CNKI搜索

Article views(2914) PDF downloads(707) Cited by()

Proportional views

The quality study on excimer laser-induced electrochemical etching of silicon

    Corresponding author: SHI Tie-lin, tlshi@public.wh.hb.cn
  • 1. School of Mechanical Science and Engineering, HUST, Wuhan 430074, China;
  • 2. Department of Electronic Machinery and Transportation Engineering, Guilin University of Electronic Technology, Guilin 54100

Abstract: To solve some problems of silicon etching technique,laser electrochemical etching process,which combines laser direct etching process and electrochemical etching process,is adopted to etch silicon.The characteristic of compound etching technique is investigated.The experiments of micromachining silicon by laser-induced electrochemical etching are carried out with a 248nm KrF excimer laser as light source and KOH solution as electrolyte.Based on the experimental results,basic etching silicon appearances by laser electrochemical etching are researched and the quality problems of transverse effect on etching surface and impacting effect on back surface are analyzed.The quality and verticality of cavities by the techniques are good.At the same time,the etching stop of silicon anisotropic etching in alkaline solution is raveled in the process.As a result,it possesses the ability of machining big aspect ratio microstructure.Besides,this process can transfer pattern without mask.

Reference (10)

Catalog

    /

    DownLoad:  Full-Size Img  PowerPoint
    Return
    Return