Uniformity test of the local optical thickness for GaN-based material

CHEN Gui-bin

Based on the interference signal in the micro-photoluminescence(μ-PL) spectra,a practical method of getting local optical thickness for GaN-based material is presented.By means of analyzing the sequence energy of interference peaks,the optical thickness of the GaN-based films can be determined.The non-uniformity of the fitted parameter can correspondingly show that of the optical thickness.This can give the important information for optimizing the material growth technique.

Corresponding author: CHEN Gui-bin, gbchen@mai.lsitp.ac.cn

1. Jiangsu Key Laboratory for Chemistry of Low Dimensional Material, Department of Physics, Huaiyin Teachers College, Huaiyin 223001, China;

2. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, the Chinese Academy of Sc

Received Date: 2005-02-28

Accepted Date: 2005-10-24

Available Online: 2006-05-25

Abstract: Based on the interference signal in the micro-photoluminescence(μ-PL) spectra,a practical method of getting local optical thickness for GaN-based material is presented.By means of analyzing the sequence energy of interference peaks,the optical thickness of the GaN-based films can be determined.The non-uniformity of the fitted parameter can correspondingly show that of the optical thickness.This can give the important information for optimizing the material growth technique.

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Reference (8)

[1]	LESTER S D,PONCE F A,CRAFORD M G et al.High dislocation densities in high efficiency GaN-based light-emitting diodes[J].A P L,1995,66(10):1249～1251.
[2]	NAKAMURA S,SENOH M,NAGAHAMA S et al.Optical gain and carrier lifetime of InGaN multi-quantum well structure laser diodes[J].A P L,1996,69(11):1568～1570.
[3]	LANG J H,GU B,XU Y et al.The GaN-based semiconductor materials LDs[J].Laser Technology,2003,27(4):321～324(in Chin-ese).
[4]	NAKAMURA S,MUKAI T.High-quality InGaN films grown on GaN films[J].Japan J A P,1992,31(10B):L1457～L1459.
[5]	LI Z L,HU X D,ZHANG B et al.Thin film GaN-based membranes by laser lift-off and cleaved InGaN LD facet[J].Laser Technology,2004,28(1):29～32(in Chinese).
[6]	LI Z Q,CHEN H,LIU H F et al.Photoluminescence study of Si doping cubic GaN grown on (001) GaAs substrates by MBE[J].J Crystal Growth,2001,227～228:420～424.
[7]	RESHCHIKOV M A,HUANG D,YUN F et al.Photoluminescence of GaN grown by molecular-beam epitaxy on a freestanding GaN template[J].A P L,2001,79(23):3779～3781.
[8]	CHEN G B,LU W,MIAO Z L et al.Study on ion-implantation induced intermixing effect of quantum well by using photoluminescence spectroscopy[J].Acta Physica Sinica,2002,51(3):659～662(in Chinese).

Uniformity test of the local optical thickness for GaN-based material

Abstract

References

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通讯作者: 陈斌, bchen63@163.com

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