Research of MEMS-based tunable vertical cavity semiconductor optical amplifiers based on transfer matrix

In order to study the gain and wavelength tunable property of MEMS-based tunable vertical cavity semiconductor optical amplifiers at reflection mode,transfer matrix method was used.Unlike the previous coupling cavity method,the transfer matrix method avoids calculating the effective cavity length and gain-enhancement factor and its calculated result is corresponded directly with the physical structure of the device.The change of the gain and peak wavelength depending on the shift of empty cavity length and the variation of position of the quantum well stacks were obtained,and the calculation result was agreement with the experiment.