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基于2维材料的异维结构光电探测器的研究进展

Research progress on 2-D material based on hetero-dimension photodetectors

  • 摘要: 基于2维材料的光电探测器是新一代探测技术的重要发展方向。2维材料因不受晶格匹配的限制,可以利用范德华力与其它维度的材料,如0维的量子点、1维的纳米线、3维的半导体衬底等,形成异维结构的光电探测器。迄今为止,基于2维材料的异维结构光电探测器研究已经取得了很大的进展,实现了显著优于单纯2维材料探测器的性能。归纳了异维结构范德华异质结在光电探测中的优势;指出了2维材料与0维材料、1维材料、3维材料或多层多维度材料组成的异维结构光电探测器的研究现状;并在此基础上,对其面临的挑战和前景进行了总结与展望。

     

    Abstract: Photodetecting based on two-dimensional (2-D) material is an important trend for new generation of photodetection technology. Free of lattice matching, 2-D materials can be easily combined via van der Waals (VDW) force to materials of other dimensions, such as zero-dimensional (0-D) quantum dots, one-dimensional (1-D) nanowires and three-dimensional (3-D) semiconductors, to form hetero-dimension (HD) photodetectors. So far, significant progresses have been made for 2-D material based HD photodetectors to exhibit obviously higher performance than 2-D material photodetectors. The merits of VDW HD junctions in photodetection are introduced in this paper, and the photodetector research achievements of the HD styles including 2D-0D, 2D-1D, 2D-3D, and multi-layer multi-dimension are reviewed. Some insight into the possible challenges and future prospects of 2-D materials based HD-structure photodetectors is attempted.

     

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