Abstract: Silicon single-photon avalanche photodiodes have become one of the most promising single-photon detectors for space applications due to their performance advantages, such as low dark count rate and high single-photon detection efficiency, as well as their technical features like miniaturization and no need for ultra-low cooling temperatures. The key technology is to reduce the damage caused by space radiation environment, reduce the dark count rate and extend the service life of the detector. The research status and trend of silicon single-photon avalanche photodiode in anti-irradiation technology were introduced, the working mechanism of single-photon detectors and the influence of spatial radiation effects on detector performance were described, and the future development prospect of silicon single-photon avalanche photodiode was prospected. It is pointed out that by enhancing the application of four anti-radiation methods, including cooling, thermal annealing, laser annealing, and structural optimization, the performance and reliability of the detector are expected to be further improved, and effective technical support is provided for the development of space exploration and space-ground communication.