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准分子激光电化学刻蚀硅的刻蚀质量研究

The quality study on excimer laser-induced electrochemical etching of silicon

  • 摘要: 为了解决现有硅刻蚀工艺中存在的刻蚀质量等问题,采用激光加工技术和电化学加工技术相结合的工艺对硅进行了刻蚀,研究了该复合工艺的工艺特性。实验中采用248nm-KrF准分子激光作光源聚焦照射浸在KOH溶液中的阳极n-Si上,实现激光诱导电化学刻蚀。在实验的基础上,研究了激光电化学刻蚀Si的刻蚀孔的基本形貌,并对横向刻蚀和背面冲击等质量问题进行了分析。结果表明,该工艺刻蚀的孔表面质量好、垂直度高;解决了碱液中Si各向异性刻蚀的自停止问题,具有加工大深宽比微结构的能力;也具有不需光刻显影就能进行图形加工的优越性。

     

    Abstract: To solve some problems of silicon etching technique,laser electrochemical etching process,which combines laser direct etching process and electrochemical etching process,is adopted to etch silicon.The characteristic of compound etching technique is investigated.The experiments of micromachining silicon by laser-induced electrochemical etching are carried out with a 248nm KrF excimer laser as light source and KOH solution as electrolyte.Based on the experimental results,basic etching silicon appearances by laser electrochemical etching are researched and the quality problems of transverse effect on etching surface and impacting effect on back surface are analyzed.The quality and verticality of cavities by the techniques are good.At the same time,the etching stop of silicon anisotropic etching in alkaline solution is raveled in the process.As a result,it possesses the ability of machining big aspect ratio microstructure.Besides,this process can transfer pattern without mask.

     

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