Thermal characteristics of spontaneous emission spectra from external-cavity surface-emitting lasers
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摘要: 热效应是限制外腔面发射激光器(VECSEL)输出功率和光束质量的主要原因。为了优化VECSEL增益芯片有源区量子阱的设计,降低激光器的热效应,提高斜效率和输出功率,采用光致荧光谱方法,对设计波长980nm VECSEL自发辐射谱的热特性进行了实验研究。取得了不同热沉温度下边发射和面发射谱随温度的变化数据。结果表明,反映有源区量子阱自身特性的边发射谱峰值波长随温度升高的红移速率是0.5nm/K,而受到增益芯片多层结构调制的面发射谱峰值波长随温度升高的红移速率只有0.1nm/K;由于受到VECSEL增益芯片中微腔的限制,面发射谱分离为多个模式,分别与微腔的腔模对应。可见对量子阱的发射波长及微腔腔长做预偏置优化处理,可以显著改善激光器的输出性能。Abstract: Thermal effect is the main reason limiting output power and beam quality of vertical-external-cavity surface-emitting lasers (VECSELs). To optimize the quantum design in active regions of gain chip, decrease thermal effect and upgrade slope efficiencies and output laser power, thermal characteristics of a VECSEL at 980nm wavelength were investigated experimentally by means of photoluminescence. The edge-emitting and surface-emitting spectra at different heatsink temperatures were obtained. The results indicate that the redshift rate of the edge-emitting spectra, which revels the intrinsic properties of quantum wells in active region, is 0.5nm/K with increasing temperature, while the redshift rate of the surface-emitting spectra, which are modulated by multiple-layer structure of the gain chip, is only 0.1nm/K with increasing temperature. The experiments also show that the surface-emitting spectra are split into several modes because of the restriction from the micro-cavities in gain chips of VECSELs. In the design of VECSEL gain chip, according to the above thermal characteristics of VECSELs, performance of a laser could be improved significantly by prebiasing emission wavelengths of quantum wells and cavity lengths of micro-cavities.
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